METHOD FOR LOCALISED HETERO-EPITAXY ON A DIELECTRIC, IN PARTICULAR OF GERMANIUM ON OXIDISED SILICON, AND METHOD FOR MAKING A PRODUCTION BASE OF A HOMOGENEOUS OR HETEROGENEOUS INTEGRATED CIRCUIT

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Bibliographic Details
Main Authors CAMMILLERI, VINCENZO DAVIDE, RENARD, CHARLES, YAM, VY, FOSSARD, FRÉDÉRIC, BOUCHIER, DANIEL
Format Patent
LanguageEnglish
French
German
Published 22.09.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Bibliography:Application Number: EP20080863510