Method for forming Cu film

As a barrier metal film, a Ti film or a Ta film is formed by sputtering method on a substrate. On top of this barrier metal film there is formed a molecular layer containing nitrogen atoms by causing the barrier metal film to absorb gas containing nitrogen atoms. A Cu film is then formed on the nitr...

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Main Authors YOSHIHAMA, TOMOYUKI, HARADA, MASAMICHI, TOYODA, SATORU, USHIKAWA, HARUNORI
Format Patent
LanguageEnglish
French
German
Published 25.08.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:As a barrier metal film, a Ti film or a Ta film is formed by sputtering method on a substrate. On top of this barrier metal film there is formed a molecular layer containing nitrogen atoms by causing the barrier metal film to absorb gas containing nitrogen atoms. A Cu film is then formed on the nitride film by CVD method and thereafter anneal processing is performed at 100 to 400°C. In this manner, by forming the Cu film, the adhesiveness between the barrier metal film and the Cu film improves.
Bibliography:Application Number: EP20100163473