METHOD OF FORMING BACKSIDE POINT CONTACT STRUCTURES FOR SILICON SOLAR CELLS

A method for fabricating point contacts to the rear surface of a silicon solar cell by coating the rear surface with a masking layer and a laser absorptive layer and directing laser radiation to the rear surface to form openings therein after which doping material is applied through the openings and...

Full description

Saved in:
Bibliographic Details
Main Author BORDEN, PETER
Format Patent
LanguageEnglish
French
German
Published 12.03.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method for fabricating point contacts to the rear surface of a silicon solar cell by coating the rear surface with a masking layer and a laser absorptive layer and directing laser radiation to the rear surface to form openings therein after which doping material is applied through the openings and contacts are applied. The doping is preferably performed by plasma immersion ion implantation.
Bibliography:Application Number: EP20080850766