SUPERJUNCTION STRUCTURES FOR POWER DEVICES AND METHODS OF MANUFACTURE

• Main Authors: JANG, HOCHEOL, RINEHIMER, MARK, L, LEE, JUNGKIL, YEDINAK, JOSEPH, A, YUN, CHONGMAN, SHARP, JOELLE, HIGGS, JASON, M, REXER, CHRISTOPHER, L, SHENOY, PRAVEEN MURALEEDHARAN, JUNG, JINYOUNG, LEE, JAEGIL, KIM, YONGSUB, LEE, JONGHUN, REICHL, DWAYNE, S, KIM, CHANGWOOK, WANG, QI
• Format: Patent
• Language: English; French; German
• Published: 21.07.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In one general aspect, a power device can include an active region having a plurality of pillars of a first conductivity type alternately arranged with a plurality of pillars of a second conductivity type. The power device can include a termination region surrounding at least a portion of the active region and can have a plurality of pillars of the first conductivity type alternately arranged with a plurality of pillars of the second conductivity type. Each of the plurality of pillars of the first conductivity type in the active region and the termination region can be defined by a trench. The power device can include an enrichment region at a bottom portion of one of the plurality of pillars of the first conductivity type in the active region.