HIGH VOLTAGE SEMICONDUCTOR DEVICE

This invention describes implementation of medium/high voltage semiconductor devices with a better voltage-blocking capability versus specific on-resistan e trade off. This approach can be implemented in baseline and submicron CMOS without any additional process steps. Said devices comprise dielectr...

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Bibliographic Details
Main Authors HERINGA, ANCO, SONSKY, JAN
Format Patent
LanguageEnglish
French
German
Published 07.07.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:This invention describes implementation of medium/high voltage semiconductor devices with a better voltage-blocking capability versus specific on-resistan e trade off. This approach can be implemented in baseline and submicron CMOS without any additional process steps. Said devices comprise dielectric regions and semiconductor regions formed between them. Conductive extentions are formed on the dielectric regions, said extentions interacting capacitively with the semiconducter regions.
Bibliography:Application Number: EP20080807976