COPPER METALLIZATION OF THROUGH SILICON VIA

A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate comprising immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition comprising a source of copper ions, an organic sulfonic acid or...

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Bibliographic Details
Main Authors LIN, Xuan, PANECCASIO, Vincent, WANG, Chen, ZHANG, Yun, WANG, Cai, ABYS, Joseph, A, HURTUBISE, Richard, RICHARDSON, Thomas, B
Format Patent
LanguageEnglish
French
German
Published 23.08.2017
Subjects
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
SEMICONDUCTOR DEVICES
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Summary:A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate comprising immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition comprising a source of copper ions, an organic sulfonic acid or inorganic acid, or one or more organic compounds selected from among polarizers and/or depolarizers, and chloride ions.
Bibliography:Application Number: EP20080797141