METHOD FOR PRODUCTION OF THIN FILM AND APPARATUS FOR MANUFACTURING THE SAME

A method for manufacturing a thin film is provided. A substrate is loaded into a chamber. A first reaction gas and a second reaction gas are supplied into the chamber. The first reaction gas is dissociated to form crystalline nanoparticles. An amorphous material is inhibited from being formed on the...

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Bibliographic Details
Main Authors LEE, DONG KWON, CHUNG, YUNG BIN, HWANG, NONG MOON
Format Patent
LanguageEnglish
French
German
Published 29.12.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing a thin film is provided. A substrate is loaded into a chamber. A first reaction gas and a second reaction gas are supplied into the chamber. The first reaction gas is dissociated to form crystalline nanoparticles. An amorphous material is inhibited from being formed on the substrate using the second reaction gas. Thereafter, a crystalline thin film is formed from the crystalline nanoparticles provided on the substrate.
Bibliography:Application Number: EP20080793309