Thin film transistor and method of fabricating the same

A thin film transistor (TFT) including a gate electrode (12), an active layer (16), and source and drain electrodes (18). The active layer (16) includes contact regions (16a) that contact the source and drain electrodes (18), which are thinner than a remaining region (16b) of the active layer (16)....

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Bibliographic Details
Main Authors MO, YEON GON, KIM, MIN-KYU, CHUNG, HYUN-JOONG, JEONG, JONG-HAN
Format Patent
LanguageEnglish
French
German
Published 24.02.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A thin film transistor (TFT) including a gate electrode (12), an active layer (16), and source and drain electrodes (18). The active layer (16) includes contact regions (16a) that contact the source and drain electrodes (18), which are thinner than a remaining region (16b) of the active layer (16). The contact regions (16a) reduce the contact resistance between the active material layer (16) and the source and drain electrodes (18).
Bibliography:Application Number: EP20090252033