Polycrystalline silicon reactor

A polycrystalline silicon reactor 1 which can prevent polycrystalline silicon which deposits on the surface of an electrode 5 holding a silicon seed rod 4 from being peeled off is provided. In a polycrystalline silicon reactor 1 which applies an electric current to a silicon seed rod 4 provided with...

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Bibliographic Details
Main Authors SAKAGUCHI, MASAAKI, ISHII, TOSHIYUKI, ENDOH, TOSHIHIDE, TEBAKARI, MASAYUKI
Format Patent
LanguageEnglish
French
German
Published 14.10.2009
Subjects
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
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Summary:A polycrystalline silicon reactor 1 which can prevent polycrystalline silicon which deposits on the surface of an electrode 5 holding a silicon seed rod 4 from being peeled off is provided. In a polycrystalline silicon reactor 1 which applies an electric current to a silicon seed rod 4 provided within a furnace, thereby heating the silicon seed rod 4, brings a source gas supplied into the furnace into reaction, and deposits polycrystalline silicon on the surface of the silicon seed rod 4, the reactor includes, at a bottom plate 2 (furnace bottom) of the furnace, an electrode holder 10 provided so as to be electrically insulated from the bottom plate 2 (furnace bottom), and a seed rod holding electrode 15 connected to the electrode holder 10, and holding the silicon seed rod 4 toward the upside. Concavo-convex portions (male thread portion) 15B exposed to a furnace atmosphere is provided at an outer peripheral surface of the seed rod holding electrode 15.
Bibliography:Application Number: EP20090155082