ARRANGEMENT AND METHOD FOR PRODUCING A CRYSTAL FROM THE MELT OF A RAW MATERIAL

• Main Authors: BUENGER, THOMAS, BUTTER, MICHAEL, EICHLER, STEFAN, RUEHMANN, RICO, SCHEFFER-CZYGAN, MAX
• Format: Patent
• Language: English; French; German
• Published: 06.03.2013
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The arrangement (1) comprises a furnace having a heating device. The heating device has one or multiple heating elements, and is equipped to generate a temperature field in the furnace directed in a direction. Multiple crucibles (14) adjacent to each other are provided in the directed temperature field for receiving a melt (16). A device is also provided for homogenizing the temperature field in a plane perpendicular to the direction in the two crucibles, and has a filling material arranged in a gap between the crucibles, where the filling material causes an anisotropic thermal conduction. Independent claims are included for: (1) a method for producing a crystal from the melt of a raw material, which involves utilizing an arrangement, and introducing a raw melt into a furnace arranged parallel to crucibles, producing an aligned temperature field in every crucible in a direction, homogenizing the temperature field in a level perpendicularly to the direction, based on a filling material, which is introduced into a gap between the crucibles or by generating traveling magnetic fields, on which the raw melt is operated in the furnace, and adjusting the solidification of the raw melt for the formation of the crystal; and (2) a crystal, which comprises a semiconductor material of gallium arsenide, where the semiconductor material has an arrangement of the dislocation density, and the crystal is a monocrystal.