Electronic devices comprising HV transistors and LV transistors, with salicided junctions

An integrated electronic device with a silicon substrate (1) having low-voltage regions (19) and high-voltage regions (13) therein. Low-voltage transistors (70) are in the LV regions and high-voltage transistors (71) are in the HV regions. The transistors are different in respect of the silicidation...

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Bibliographic Details
Main Authors VAJANA, BRUNO, DALLA LIBERA, GIOVANNA, GALBIATI, NADIA, PATELMO, MATTEO
Format Patent
LanguageEnglish
French
German
Published 03.06.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An integrated electronic device with a silicon substrate (1) having low-voltage regions (19) and high-voltage regions (13) therein. Low-voltage transistors (70) are in the LV regions and high-voltage transistors (71) are in the HV regions. The transistors are different in respect of the silicidation of source and drain regions. Each LV transistor has silicided source, gate and drain (55,57a1,57a2) and each HV transistor has silicided gate (57d) and non-silicided source and drain regions (64).
Bibliography:Application Number: EP20080021768