PMOS PIXEL STRUCTURE WITH LOW CROSS TALK
An image sensor with an image area having a plurality of pixels each having a photodetector of a first conductivity type, the image sensor includes a substrate of the first conductivity type; a first layer of the second conductivity type between the substrate and the photodetectors, spanning the ima...
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Main Authors | , |
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Format | Patent |
Language | English French German |
Published |
26.08.2015
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Subjects | |
Online Access | Get full text |
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Summary: | An image sensor with an image area having a plurality of pixels each having a photodetector of a first conductivity type, the image sensor includes a substrate of the first conductivity type; a first layer of the second conductivity type between the substrate and the photodetectors, spanning the image area and biased at predetermined potential with respect to the substrate for driving excess carriers into the substrate to reduce cross talk; one or more adjacent active electronic components disposed in the first layer within each pixel; and electronic circuitry disposed in the substrate outside of the image area. |
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Bibliography: | Application Number: EP20070753971 |