SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES HAVING HIGH-Q WAFER BACK-SIDE CAPACITORS

• Main Authors: YANG, CHIHAO, RAMACHANDRAN, VIDHYA, DALTON, TIMOTHY, JOSEPH, WONG,KEITH, KWONG HON, HSU, LOUIS, LUN, CLEVENGER, LAWRENCE, RADENS, CARL, JOHN
• Format: Patent
• Language: English; French; German
• Published: 21.05.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Methods are provided for fabricating semiconductor IC (integrated circuit) chips having high-Q on-chip capacitors formed on the chip back-side and connected to integrated circuits on the chip front-side using through-wafer interconnects. In one aspect, a semiconductor device includes a semiconductor substrate having a front side, a back side, and a buried insulating layer interposed between the front and back sides of the substrate. An integrated circuit is formed on the front side of the semiconductor substrate, an integrated capacitor is formed on the back side of the semiconductor substrate, and an interconnection structure is formed through the buried insulating layer to connect the integrated capacitor to the integrated circuit.