SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES HAVING HIGH-Q WAFER BACK-SIDE CAPACITORS

Methods are provided for fabricating semiconductor IC (integrated circuit) chips having high-Q on-chip capacitors formed on the chip back-side and connected to integrated circuits on the chip front-side using through-wafer interconnects. In one aspect, a semiconductor device includes a semiconductor...

Full description

Saved in:
Bibliographic Details
Main Authors YANG, CHIHAO, RAMACHANDRAN, VIDHYA, DALTON, TIMOTHY, JOSEPH, WONG,KEITH, KWONG HON, HSU, LOUIS, LUN, CLEVENGER, LAWRENCE, RADENS, CARL, JOHN
Format Patent
LanguageEnglish
French
German
Published 21.05.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Methods are provided for fabricating semiconductor IC (integrated circuit) chips having high-Q on-chip capacitors formed on the chip back-side and connected to integrated circuits on the chip front-side using through-wafer interconnects. In one aspect, a semiconductor device includes a semiconductor substrate having a front side, a back side, and a buried insulating layer interposed between the front and back sides of the substrate. An integrated circuit is formed on the front side of the semiconductor substrate, an integrated capacitor is formed on the back side of the semiconductor substrate, and an interconnection structure is formed through the buried insulating layer to connect the integrated capacitor to the integrated circuit.
Bibliography:Application Number: EP20070729380