Semiconductor integrated circuit device and method of manufacturing the same

• Main Authors: SUZUKI, HIROMICHI, MIYAKI, YOSHINORI, KANEDA, TSUYOSHI
• Format: Patent
• Language: English; French; German
• Published: 03.06.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor integrated circuit device is provided which includes a wire (19) having a diameter equal to or less than 30 µm, and a connected member (4) molded by a resin (24). The connected member (4) includes a metal layer (1) including a palladium layer provided at a portion to which said wire is connected. A solder containing Pb as a main composition metal is provided at a portion outside a portion molded by the resin (24). Arrangements are provided to effectively prevent wire disconnection generated due to an increase of heat applied to a semiconductor integrated circuit device. The semiconductor integrated circuit device is structured such that a metal layer (1) containing a Pd layer is provided in a portion to which a connecting member (19) having a conductivity is connected, and an alloy layer having a melting point higher than that of an Sn-Pb eutectic solder and containing no Pb as a main composing metal is provided outside a portion molded by a resin (24). Further, a metal layer in which a thickness in a portion to which the connecting member (19) having the conductivity is adhered is equal to or more than 10 µm is provided in the connecting member (19).