Photon induced etching of copper

The present invention provides a method for removing at least part of a copper comprising layer (4) from a substrate (1), the substrate (1) comprising at least a copper comprising surface layer (4). The method comprises in a first reaction chamber converting at least part of the copper comprising su...

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Bibliographic Details
Main Author DICTUSIES
Format Patent
LanguageEnglish
French
German
Published 11.11.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides a method for removing at least part of a copper comprising layer (4) from a substrate (1), the substrate (1) comprising at least a copper comprising surface layer (4). The method comprises in a first reaction chamber converting at least part of the copper comprising surface layer (4) into a copper halide surface layer (5) and in a second reaction chamber removing at least part of the copper halide surface layer (5) by exposing it to a photon comprising ambient (6), thereby initiating formation of volatile copper halide products (8). During exposure to the photon comprising ambient (6), the method furthermore comprises removing the volatile copper halide products (8) from the second reaction chamber to avoid saturation of the volatile copper halide products (8) in the second reaction chamber. The method according to embodiments of the present invention may be used to pattern copper comprising layers. For example, the method according to embodiments of the invention may be used to form copper comprising interconnect structures in a semiconductor device.
Bibliography:Application Number: EP20080159218