FIELD EFFECT TRANSISTOR

Disclosed is an HJFET 110 which comprises: a channel layer 12 composed of In y Ga 1-y N (0‰¤y‰¤1); a carrier supply layer 13 composed of Al x Ga 1-x N (0‰¤x‰¤1), the carrier supply layer 13 being provided over the channel layer 12 and including at least one p-type layer; and a source electrode 15S,...

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Main Authors ANDO, YUJI, KURODA, NAOTAKA, NAKAYAMA, TATSUO, INOUE, TAKASHI, MIYAMOTO, HIRONOBU, MURASE, YASUHIRO, OTA, KAZUKI, WAKEJIMA, AKIO, OKAMOTO, YASUHIRO
Format Patent
LanguageEnglish
French
German
Published 17.12.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed is an HJFET 110 which comprises: a channel layer 12 composed of In y Ga 1-y N (0‰¤y‰¤1); a carrier supply layer 13 composed of Al x Ga 1-x N (0‰¤x‰¤1), the carrier supply layer 13 being provided over the channel layer 12 and including at least one p-type layer; and a source electrode 15S, a drain electrode 15D and a gate electrode 17 which are disposed facing the channel layer 12 through the p-type layer, and provided over the carrier supply layer 13. The following relational expression is satisfied: 5.6 × 10 11 ¢ x < N A × · × t ¢ cm - 2 < 5.6 × 10 13 ¢ x , where x denotes an Al compositional ratio of said carrier supply layer, t denotes a thickness of said p-type layer, N A denotes an impurity concentration, and · denotes an activation ratio.
Bibliography:Application Number: EP20070736989