SEMICONDUCTOR DEVICE FABRICATED USING SUBLIMATION

The invention provides a method of fabricating a semiconductive device [200]. In this embodiment, the method comprises depositing a hydrocarbon layer [294] over a semiconductive substrate, forming an interconnect structure [295, 297] within the hydrocarbon layer [294], and removing the hydrocarbon l...

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Bibliographic Details
Main Authors POAG, FRANK, HAIDER, ASAD, RAMAPPA, DEEPAK A, GULDI, RICHARD L
Format Patent
LanguageEnglish
French
German
Published 19.01.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention provides a method of fabricating a semiconductive device [200]. In this embodiment, the method comprises depositing a hydrocarbon layer [294] over a semiconductive substrate, forming an interconnect structure [295, 297] within the hydrocarbon layer [294], and removing the hydrocarbon layer [294] by sublimation.
Bibliography:Application Number: EP20060846565