Free-Standing III-N layers or devices obtained by selective masking of III-N layers during III-N layer growth

A free-standing III-N wafer, wherein III denotes at least one element of the group III of the periodic Table of Elements, selected from Al, Ga and In, is obtained by a process comprising providing a III-N layer having a surface, which comprises more than one facet, and selectively depositing a mask...

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Bibliographic Details
Main Authors WUNDERER, THOMAS, SCHOLZ, FERDINAND, HABEL, FRANK, NEUBERT, BARBARA, BRUECKNER, PETER
Format Patent
LanguageEnglish
French
German
Published 03.09.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A free-standing III-N wafer, wherein III denotes at least one element of the group III of the periodic Table of Elements, selected from Al, Ga and In, is obtained by a process comprising providing a III-N layer having a surface, which comprises more than one facet, and selectively depositing a mask material only on one or multiple, but not on all facets during a III-N layer growth process. Thereby, it is possible to produce free-standing thick III-N layers. Further, semiconductor devices or components having special structures and layers can be produced.
Bibliography:Application Number: EP20080009577