SEMICONDUCTOR DEVICES AND METHOD OF FABRICATION
An embodiment of a semiconductor device includes a gate electrode overlying a substrate and a lightly doped epitaxial layer formed on the substrate. A high energy implant region forms a well in a source side of the lightly doped epitaxial layer. A self-aligned halo implant region is formed on a sour...
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Main Authors | , |
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Format | Patent |
Language | English French German |
Published |
16.04.2008
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Subjects | |
Online Access | Get full text |
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