SEMICONDUCTOR DEVICES AND METHOD OF FABRICATION

• Main Authors: YANG, HONGNING, ZUO, JIANG-KAI
• Format: Patent
• Language: English; French; German
• Published: 16.04.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An embodiment of a semiconductor device includes a gate electrode overlying a substrate and a lightly doped epitaxial layer formed on the substrate. A high energy implant region forms a well in a source side of the lightly doped epitaxial layer. A self-aligned halo implant region is formed on a sour...