SEMICONDUCTOR DEVICES AND METHOD OF FABRICATION

An embodiment of a semiconductor device includes a gate electrode overlying a substrate and a lightly doped epitaxial layer formed on the substrate. A high energy implant region forms a well in a source side of the lightly doped epitaxial layer. A self-aligned halo implant region is formed on a sour...

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Bibliographic Details
Main Authors YANG, HONGNING, ZUO, JIANG-KAI
Format Patent
LanguageEnglish
French
German
Published 16.04.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An embodiment of a semiconductor device includes a gate electrode overlying a substrate and a lightly doped epitaxial layer formed on the substrate. A high energy implant region forms a well in a source side of the lightly doped epitaxial layer. A self-aligned halo implant region is formed on a source side of the device and within the high energy well implant. An implant region on a drain side of the lightly doped epitaxial layer forms a gate overlapped LDD (GOLD). A doped region within the halo implant region forms a source. A doped region within the gate overlapped LDD (GOLD) forms a drain.
Bibliography:Application Number: EP20060785786