BACKSIDE METHOD FOR FABRICATING SEMICONDUCTOR COMPONENTS WITH CONDUCTIVE INTERCONNECTS

A stacked semiconductor component includes a semiconductor substrate having a substrate contact, a substrate opening extending to an inner surface of the substrate contact, and a conductive interconnect comprising a wire in the substrate opening having a wire bonded connection with the inner surface...

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Bibliographic Details
Main Authors HIATT, William, M, WOOD, Alan, G, HEMBREE, David, R
Format Patent
LanguageEnglish
French
German
Published 04.12.2019
Subjects
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Summary:A stacked semiconductor component includes a semiconductor substrate having a substrate contact, a substrate opening extending to an inner surface of the substrate contact, and a conductive interconnect comprising a wire in the substrate opening having a wire bonded connection with the inner surface of the substrate contact. The stacked semiconductor component also includes a second substrate stacked on the semiconductor substrate having a contact bonded to the conductive interconnect on the semiconductor substrate. The second substrate can also include conductive interconnects in the form of wire bonded wires, and the stacked semiconductor substrate can include a third semiconductor substrate stacked on the second substrate.
Bibliography:Application Number: EP20060752168