ULTRALOW DIELECTRIC CONSTANT LAYER WITH CONTROLLED BIAXIAL STRESS

A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water...

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Main Authors GATES, STEPHEN, M, GRILL, ALFRED, DIMITRAKOPOULOS, CHRISTOS, D, NEUMAYER, DEBORAH, A, LINIGER, ERIC, G, SHAW, THOMAS, M, LANE, MICHAEL, W, LIU, XIAO, HU, NGUYEN, SON, VAN
Format Patent
LanguageEnglish
French
German
Published 30.03.2011
Subjects
APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL
APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
LAYERED PRODUCTS
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SPRAYING OR ATOMISING IN GENERAL
TRANSPORTING
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Summary:A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.
Bibliography:Application Number: EP20060849665