EXPOSURE METHOD, METHOD FOR FORMING PROJECTING AND RECESSED PATTERN, AND METHOD FOR MANUFACTURING OPTICAL ELEMENT

An exposure pattern having a line width of submicron size is simply formed by using an inexpensive and stable solid state laser or a gas laser as an exposure light source, and by using a photoresist for g-line or i-line. The exposure is performed by locally controlling a reaction time constant of th...

Full description

Saved in:
Bibliographic Details
Main Authors EGAMI, CHIKARA, HODOSAWA, YOSHIHITO
Format Patent
LanguageEnglish
French
German
Published 29.04.2009
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CALCULATING
CINEMATOGRAPHY
COMPUTING
COUNTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HANDLING RECORD CARRIERS
HOLOGRAPHY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
PRESENTATION OF DATA
RECOGNITION OF DATA
RECORD CARRIERS
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An exposure pattern having a line width of submicron size is simply formed by using an inexpensive and stable solid state laser or a gas laser as an exposure light source, and by using a photoresist for g-line or i-line. The exposure is performed by locally controlling a reaction time constant of the photosensitive material with beaming the laser beam on a predetermined portion of a layer of the photosensitive material having a predetermined thickness formed on the surface of a substrate W, with beam intensity and scanning rate of the laser beam being controlled.
Bibliography:Application Number: EP20060701442