LOW CHARGING DIELECTRIC FOR CAPACITIVE MEMS DEVICES AND METHOD OF MAKING THE SAME
An improved dielectric suitable for use in electronic and micro-electromechanical (MEMS) components. The dielectric includes silicon nitride having a percentage of Si:H bonds greater than a percentage of N:H bonds, in order to reduce the level of charge trapping of the silicon nitride.
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Main Authors | , , , , , , , |
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Format | Patent |
Language | English French German |
Published |
19.09.2007
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Subjects | |
Online Access | Get full text |
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Summary: | An improved dielectric suitable for use in electronic and micro-electromechanical (MEMS) components. The dielectric includes silicon nitride having a percentage of Si:H bonds greater than a percentage of N:H bonds, in order to reduce the level of charge trapping of the silicon nitride. |
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Bibliography: | Application Number: EP20050854397 |