LOW CHARGING DIELECTRIC FOR CAPACITIVE MEMS DEVICES AND METHOD OF MAKING THE SAME

An improved dielectric suitable for use in electronic and micro-electromechanical (MEMS) components. The dielectric includes silicon nitride having a percentage of Si:H bonds greater than a percentage of N:H bonds, in order to reduce the level of charge trapping of the silicon nitride.

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Bibliographic Details
Main Authors TRANCHINI, ROBERT, C, CRAMER, HARLAN, C, DESALVO, GREGORY, C, HORNER, ROBERT, J, HORNER, JEREMIAH, J, KIRBY, CHRISTOPHER, F, HOWELL, ROBERT, S, DIX, GILBERT, E
Format Patent
LanguageEnglish
French
German
Published 19.09.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SWITCHES
ELECTRICITY
EMERGENCY PROTECTIVE DEVICES
RELAYS
SELECTORS
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Summary:An improved dielectric suitable for use in electronic and micro-electromechanical (MEMS) components. The dielectric includes silicon nitride having a percentage of Si:H bonds greater than a percentage of N:H bonds, in order to reduce the level of charge trapping of the silicon nitride.
Bibliography:Application Number: EP20050854397