A SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING IT

A method of forming a semiconductor device, the method including forming a substrate including a first surface having a non-doped region, forming an insulative material over the first surface of the substrate, forming a first conductive material over the first insulative material, forming an opening...

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Bibliographic Details
Main Authors DODD, Simon, TOM, Dennis W, MILLER, Richard Todd, BRYANT, Frank R, MCMAHON, Terry E, HINDMAN, Gregory T, WANG, S. Jonathan
Format Patent
LanguageEnglish
French
German
Published 20.03.2019
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Summary:A method of forming a semiconductor device, the method including forming a substrate including a first surface having a non-doped region, forming an insulative material over the first surface of the substrate, forming a first conductive material over the first insulative material, forming an opening in the first conductive material that forms a path to the substrate that is substantially free of the first conductive material and the first insulative material, forming a second insulative material over the first conductive material, and forming a second conductive material over the second insulative material, wherein the second conductive material is formed in the opening and contacts the non-doped region of the substrate.
Bibliography:Application Number: EP20050801164