A SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING IT
A method of forming a semiconductor device, the method including forming a substrate including a first surface having a non-doped region, forming an insulative material over the first surface of the substrate, forming a first conductive material over the first insulative material, forming an opening...
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Main Authors | , , , , , , |
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Format | Patent |
Language | English French German |
Published |
20.03.2019
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Subjects | |
Online Access | Get full text |
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Summary: | A method of forming a semiconductor device, the method including forming a substrate including a first surface having a non-doped region, forming an insulative material over the first surface of the substrate, forming a first conductive material over the first insulative material, forming an opening in the first conductive material that forms a path to the substrate that is substantially free of the first conductive material and the first insulative material, forming a second insulative material over the first conductive material, and forming a second conductive material over the second insulative material, wherein the second conductive material is formed in the opening and contacts the non-doped region of the substrate. |
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Bibliography: | Application Number: EP20050801164 |