PLASMA ENHANCED NITRIDE LAYER

An etch stop layer located over a plasma enhanced nitride (PEN) layer. Interlayer dielectric material is then formed over the etched stop layer. The etch stop layer is used as an etch stop for etching openings in the interlayer dielectric. In some embodiments, integrated circuits built with the PEN...

Full description

Saved in:
Bibliographic Details
Main Authors STEPHENS, TAB, A, JEON, YONGJOO, CHEN, JIAN, FILIPIAK, STANLEY, M
Format Patent
LanguageEnglish
French
German
Published 20.06.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An etch stop layer located over a plasma enhanced nitride (PEN) layer. Interlayer dielectric material is then formed over the etched stop layer. The etch stop layer is used as an etch stop for etching openings in the interlayer dielectric. In some embodiments, integrated circuits built with the PEN layer may include transistors with improved drive current at a given leakage current. Also, integrated circuits with the PEN layer may exhibit reduced parasitic capacitance.
Bibliography:Application Number: EP20050793772