MONOLITHIC VERTICAL JUNCTION FIELD EFFECT TRANSISTOR AND SCHOTTKY BARRIER DIODE FABRICATED FROM SILICON CARBIDE AND METHOD FOR FABRICATING THE SAME

A switching element combining a self-aligned, vertical junction field effect transistor with etched-implanted gate and an integrated antiparallel Schottky barrier diode is described. The anode of the diode is connected to the source of the transistor at the device level in order to reduce losses due...

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Bibliographic Details
Main Authors MAZZOLA, MICHAEL, S, MERRETT, JOSEPH, N
Format Patent
LanguageEnglish
French
German
Published 07.12.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A switching element combining a self-aligned, vertical junction field effect transistor with etched-implanted gate and an integrated antiparallel Schottky barrier diode is described. The anode of the diode is connected to the source of the transistor at the device level in order to reduce losses due to stray inductances. The SiC surface in the SBD anode region is conditioned through dry etching to achieve a low Schottky barrier height so as to reduce power losses associated with the turn on voltage of the SBD.
Bibliography:Application Number: EP20050858028