REDUCING PLASMA IGNITION PRESSURE

A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma i...

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Bibliographic Details
Main Authors LYNDAKER, BRADFORD J, WIEPKING, MARK, KUTHI, ANDRAS, FISCHER, ANDREAS
Format Patent
LanguageEnglish
French
German
Published 31.03.2010
Subjects
CLADDING OR PLATING BY SOLDERING OR WELDING
CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING
MACHINE TOOLS
METAL-WORKING NOT OTHERWISE PROVIDED FOR
PERFORMING OPERATIONS
SOLDERING OR UNSOLDERING
TRANSPORTING
WELDING
WORKING BY LASER BEAM
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Summary:A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.
Bibliography:Application Number: EP20050761079