Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth
The present invention provides a ring laser system (100) comprising forming an optical core (110) by an epitaxial layer overgrowth over an intermediate layer (106), forming multi-quantum wells (112) adjacent to the optical core (110) and forming an outer structure (116) further comprising a total in...
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| Main Authors | , , |
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| Format | Patent |
| Language | English French German |
| Published |
31.12.2008
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| Subjects | |
| Online Access | Get full text |
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| Abstract | The present invention provides a ring laser system (100) comprising forming an optical core (110) by an epitaxial layer overgrowth over an intermediate layer (106), forming multi-quantum wells (112) adjacent to the optical core (110) and forming an outer structure (116) further comprising a total internal reflector, wherein forming photons within the multi-quantum wells (112) further comprises circulating the photons within the ring laser structure (302) comprising the outer structure (116), the multi-quantum wells (112), and the optical core (110). |
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| AbstractList | The present invention provides a ring laser system (100) comprising forming an optical core (110) by an epitaxial layer overgrowth over an intermediate layer (106), forming multi-quantum wells (112) adjacent to the optical core (110) and forming an outer structure (116) further comprising a total internal reflector, wherein forming photons within the multi-quantum wells (112) further comprises circulating the photons within the ring laser structure (302) comprising the outer structure (116), the multi-quantum wells (112), and the optical core (110). |
| Author | TAN, MICHAEL R.T CORZINE, SCOTT W BOUR, DAVID P |
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| DocumentTitleAlternate | Système à semiconducteur comprenant un laser à cavité à anneau fabriqué par croissance de recouvrement épitaxiale Halbleitersystem mit einem Kreislaser hergestellt mit epitaxialem Überwachsen |
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| Notes | Application Number: EP20060016640 |
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| Snippet | The present invention provides a ring laser system (100) comprising forming an optical core (110) by an epitaxial layer overgrowth over an intermediate layer... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY |
| Title | Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth |
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