Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth

The present invention provides a ring laser system (100) comprising forming an optical core (110) by an epitaxial layer overgrowth over an intermediate layer (106), forming multi-quantum wells (112) adjacent to the optical core (110) and forming an outer structure (116) further comprising a total in...

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Bibliographic Details
Main Authors TAN, MICHAEL R.T, BOUR, DAVID P, CORZINE, SCOTT W
Format Patent
LanguageEnglish
French
German
Published 31.12.2008
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:The present invention provides a ring laser system (100) comprising forming an optical core (110) by an epitaxial layer overgrowth over an intermediate layer (106), forming multi-quantum wells (112) adjacent to the optical core (110) and forming an outer structure (116) further comprising a total internal reflector, wherein forming photons within the multi-quantum wells (112) further comprises circulating the photons within the ring laser structure (302) comprising the outer structure (116), the multi-quantum wells (112), and the optical core (110).
Bibliography:Application Number: EP20060016640