Reduced crosstalk CMOS image sensors

CMOS image sensor having high sensitivity and low crosstalk, particularly at far-red to infrared wavelengths, and a method for fabricating a CMOS image sensor. A CMOS image sensor has a substrate (202, 302, 602), an epitaxial layer (204, 304, 606) above the substrate (202, 302, 602), and a plurality...

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Bibliographic Details
Main Authors BIGELOW, DAVID W, LAMASTER, FREDERICK P, BAHL, SANDEEP R
Format Patent
LanguageEnglish
French
German
Published 11.03.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:CMOS image sensor having high sensitivity and low crosstalk, particularly at far-red to infrared wavelengths, and a method for fabricating a CMOS image sensor. A CMOS image sensor has a substrate (202, 302, 602), an epitaxial layer (204, 304, 606) above the substrate (202, 302, 602), and a plurality of pixels (210, 212, 310, 312, 402) extending into the epitaxial layer (204, 304, 606) for receiving light. The image sensor also includes at least one of a horizontal barrier layer (224, 324, 604) between the substrate (202, 302, 602) and the epitaxial layer (204, 304, 606) for preventing carriers generated in the substrate (202, 302, 602) from moving to the epitaxial layer (204, 304, 606), and a plurality of lateral barrier layers (322, 326, 520, 610) between adjacent ones of the plurality of pixels (310, 312, 402) for preventing lateral diffusion of electrons in the epitaxial layer (204, 304, 606).
Bibliography:Application Number: EP20060015356