Realisation of two superposed elements inside an integrated electronic circuit

A radiation attenuating layer (2) is formed above lower circuit element that is reflective to radiation. A layer transparent to radiation is formed above attenuating layer. A lithography resist mask deposited on circuit is exposed to primary radiation flux. The mask is developed to remove portions e...

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Bibliographic Details
Main Authors BUSTOS, JESSY, THONY, PHILIPPE, CORONEL, PHILIPPE
Format Patent
LanguageEnglish
French
German
Published 20.04.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A radiation attenuating layer (2) is formed above lower circuit element that is reflective to radiation. A layer transparent to radiation is formed above attenuating layer. A lithography resist mask deposited on circuit is exposed to primary radiation flux. The mask is developed to remove portions exposed to amount of radiation above mask development threshold. An upper circuit element that has one side defined by edge of attenuating layer and other side superimposed with a side of lower element is formed. An independent claim is included for integrated electronic circuit.
Bibliography:Application Number: EP20060290897