Mask formation over an integrated electronic circuit

The method involves forming a buried cavity (C) in a substrate (100) of an integrated electronic circuit, and heating the substrate to close the cavity by creating a recess at right of the cavity. The recess is partially filled with a residual portion to attenuate radiation reflected by the substrat...

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Bibliographic Details
Main Authors BUSTOS, JESSY, THONY, PHILIPPE, CORONEL, PHILIPPE
Format Patent
LanguageEnglish
French
German
Published 30.12.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The method involves forming a buried cavity (C) in a substrate (100) of an integrated electronic circuit, and heating the substrate to close the cavity by creating a recess at right of the cavity. The recess is partially filled with a residual portion to attenuate radiation reflected by the substrate, and a lithographic resin layer (3) is formed on the circuit. The layer is exposed to radiation flux, where flux or its duration is adjusted so that a quantity of radiation corresponding to sum of two radiation fluxes is higher than developed threshold of the layer. An independent claim is also included for an integrated electronic circuit comprising a substrate.
Bibliography:Application Number: EP20060290900