COMPOSITION AND PROCESS FOR POST-ETCH REMOVAL OF PHOTORESIST AND/OR SACRIFICIAL ANTI-REFLECTIVE MATERIAL DEPOSITED ON A SUBSTRATE

• Main Authors: RATH, MELISSA, K, BAUM, THOMAS, H, MINSEK, DAVID, BERNHARD, DAVID, D, KORZENSKI, MICHAEL, B
• Format: Patent
• Language: English; French; German
• Published: 06.01.2016
• Subjects: ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES; APPARATUS SPECIALLY ADAPTED THEREFOR; CANDLES; CHEMISTRY; CINEMATOGRAPHY; DETERGENT COMPOSITIONS; DETERGENTS; ELECTROGRAPHY; FATTY ACIDS THEREFROM; HOLOGRAPHY; HUMAN NECESSITIES; HYGIENE; MATERIALS THEREFOR; MEDICAL OR VETERINARY SCIENCE; METALLURGY; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; PREPARATIONS FOR MEDICAL, DENTAL, OR TOILET PURPOSES; RECOVERY OF GLYCEROL; RESIN SOAPS; SOAP OR SOAP-MAKING; USE OF SINGLE SUBSTANCES AS DETERGENTS

A composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or co-solvent species, to achieve high-efficiency removal of photoresist and/or SARC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.