Quantum dot intermediate band infrared photodetector

The invention relates to an infrared photodetector containing a region of semiconductor quantum dots (1), n type doped in the barrier region (2), and sandwiched between two layers of semiconductors of n type (3) and p type (4). When infrared photons (5) are absorbed, they create electronic transitio...

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Bibliographic Details
Main Authors LOPEZ, NAIR, STANLEY, COLIN, MARTI, ANTONIO, ANTOLIN, ELISA, CANOVAS, ENRIQUE, LUQUE, ANTONIO
Format Patent
LanguageEnglish
French
German
Published 06.12.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to an infrared photodetector containing a region of semiconductor quantum dots (1), n type doped in the barrier region (2), and sandwiched between two layers of semiconductors of n type (3) and p type (4). When infrared photons (5) are absorbed, they create electronic transitions (6) from the confined states in the dots (7) to the conduction band (8). This causes the appearance of a voltage between device p (9) and n (10) contacts or the production of an electrical current. In either way, the detection of the infrared light is possible. A low band-pass filter (12) prevents high energy photons (13) from entering the device and cause electronic transitions (14) from the valence (15) band to the conduction band (8).
Bibliography:Application Number: EP20060380115