Method of making a semiconductor device

A semiconductor device comprises a semiconductor substrate (110) having a patterned interconnect layer (120) formed thereon. A first capacitor (210), a second capacitor (220), and a resistor (230) are formed over the interconnect layer. The first capacitor comprises a layer of electrode material and...

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Bibliographic Details
Main Authors MILLER, MELVY F, ZURCHER, PETER, REMMEL, THOMAS P, KALPAT, SRIRAM
Format Patent
LanguageEnglish
French
German
Published 04.09.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device comprises a semiconductor substrate (110) having a patterned interconnect layer (120) formed thereon. A first capacitor (210), a second capacitor (220), and a resistor (230) are formed over the interconnect layer. The first capacitor comprises a layer of electrode material and a first number of dielectric layers. The second capacitor comprises the layer of electrode material and a second number of dielectric layers. The first number of dielectric layers is greater than he second number of dielectric layers such that the first capacitor has a higher capacitance per unit area than does the second capacitor.
Bibliography:Application Number: EP20050713151