VARIABLE CURRENT SINKING FOR COARSE/FINE PROGRAMMING OF NON-VOLATILE MEMORY

A non-volatile memory device is programmed by first performing a coarse programming process and subsequently performing a fine programming process. The coarse/fine programming methodology is enhanced by using an efficient verification scheme that allows some non-volatile memory cells to be verified...

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Bibliographic Details
Main Authors GUTERMAN, DANIEL, C, MOKHLESI, NIMA, FONG, YUPIN
Format Patent
LanguageEnglish
French
German
Published 05.10.2011
Subjects
CHARACTERISTIC FEATURES OF FOOTWEAR
FOOTWEAR
HUMAN NECESSITIES
INFORMATION STORAGE
PARTS OF FOOTWEAR
PHYSICS
STATIC STORES
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Summary:A non-volatile memory device is programmed by first performing a coarse programming process and subsequently performing a fine programming process. The coarse/fine programming methodology is enhanced by using an efficient verification scheme that allows some non-volatile memory cells to be verified for the coarse programming process while other non-volatile memory cells are verified for the fine programming process. The fine programming process can be accomplished using current sinking, charge packet metering or other suitable means.
Bibliography:Application Number: EP20050711926