Field effect transistor and method of manufacturing the same

An FET includes a first semiconductor layer and a second semiconductor layer, the second semiconductor layer being formed on the first semiconductor layer and having a band gap energy greater than that of the first semiconductor layer. The first and second semiconductor layers are made of a Group II...

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Bibliographic Details
Main Authors AKAMATSU, SHIRO, OHMAKI, YUJI
Format Patent
LanguageEnglish
French
German
Published 27.09.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An FET includes a first semiconductor layer and a second semiconductor layer, the second semiconductor layer being formed on the first semiconductor layer and having a band gap energy greater than that of the first semiconductor layer. The first and second semiconductor layers are made of a Group III-V compound semiconductor layer; formed on the first semiconductor layer are a gate electrode (36) and a source electrode (35); formed on the second semiconductor layer is a drain electrode (37); and the drain electrode and the gate electrode are formed respectively on opposing planes of a semiconductor structure which contains the first and second semiconductor layers. This arrangement enables a drain's breakdown voltage to be increased in the FET, because the gate electrode (36) and the drain electrode (37) are respectively disposed, in a spatial separation of each other, on different planes instead of the same plane of the semiconductor structure.
Bibliography:Application Number: EP20060111709