High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor

• Main Authors: YANO, YUKIO, OBINATA, SHIGEYUKI, NAOKI, KUMAGAI, FUJIHIRA, TATSUHIKO
• Format: Patent
• Language: English; French; German
• Published: 25.05.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

There is provided a high voltage integrated circuit comprising a first high voltage junction terminating structure formed in the shape of a loop. At least a MIS transistor is formed inside said loop of said first high voltage junction terminating structure; and a high voltage MIS transistor has a dr...