High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor

There is provided a high voltage integrated circuit comprising a first high voltage junction terminating structure formed in the shape of a loop. At least a MIS transistor is formed inside said loop of said first high voltage junction terminating structure; and a high voltage MIS transistor has a dr...

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Bibliographic Details
Main Authors YANO, YUKIO, OBINATA, SHIGEYUKI, NAOKI, KUMAGAI, FUJIHIRA, TATSUHIKO
Format Patent
LanguageEnglish
French
German
Published 25.05.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:There is provided a high voltage integrated circuit comprising a first high voltage junction terminating structure formed in the shape of a loop. At least a MIS transistor is formed inside said loop of said first high voltage junction terminating structure; and a high voltage MIS transistor has a drain electrode on one side of said loop of said first high voltage junction terminating structure, and a gate electrode and a source electrode on another side of said loop of said first high voltage junction terminating structure.
Bibliography:Application Number: EP20060009337