High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor
There is provided a high voltage integrated circuit comprising a first high voltage junction terminating structure formed in the shape of a loop. At least a MIS transistor is formed inside said loop of said first high voltage junction terminating structure; and a high voltage MIS transistor has a dr...
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Main Authors | , , , |
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Format | Patent |
Language | English French German |
Published |
23.12.2009
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Subjects | |
Online Access | Get full text |
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Summary: | There is provided a high voltage integrated circuit comprising a first high voltage junction terminating structure formed in the shape of a loop. At least a MIS transistor is formed inside said loop of said first high voltage junction terminating structure; and a high voltage MIS transistor has a drain electrode on one side of said loop of said first high voltage junction terminating structure, and a gate electrode and a source electrode on another side of said loop of said first high voltage junction terminating structure. |
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Bibliography: | Application Number: EP20060009337 |