Film bulk acoustic resonator and a method for manufacturing the same

A film bulk acoustic resonator (FBAR) including a substrate (110) having an etched air gap (111) therethrough; a resonance part (141) having a first electrode (141), a piezoelectric film (143) and a second electrode (145) which are laminated in turn above the air gap; and an etching resistance layer...

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Bibliographic Details
Main Authors Ha, Byeoung-ju, Hong, Seog-woo, Choi, Hyung, Song, In-sang
Format Patent
LanguageEnglish
French
German
Published 15.03.2017
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
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Summary:A film bulk acoustic resonator (FBAR) including a substrate (110) having an etched air gap (111) therethrough; a resonance part (141) having a first electrode (141), a piezoelectric film (143) and a second electrode (145) which are laminated in turn above the air gap; and an etching resistance layer disposed between the air gap and the resonance part to limit an etching depth in forming the air gap, thereby preventing damage to the resonance part (140).
Bibliography:Application Number: EP20060000147