LOCALIZED ANNEALING OF METAL-SILICON CARBIDE OHMIC CONTACTS

A method of forming an ohmic contact for a semiconductor device, the ohmic contact having a specific contact resistivity of less than 10 e-03 ohm-cm, the method comprising: forming a metal on a Silicon Carbide (SiC) substrate opposite a stack of n/p type epitaxial layers; and annealing an interface...

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Bibliographic Details
Main Authors EDMOND, John, A, DONOFRIO, Matthew, SLATER, David, B, Jr
Format Patent
LanguageEnglish
French
German
Published 03.04.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming an ohmic contact for a semiconductor device, the ohmic contact having a specific contact resistivity of less than 10 e-03 ohm-cm, the method comprising: forming a metal on a Silicon Carbide (SiC) substrate opposite a stack of n/p type epitaxial layers; and annealing an interface location of the metal and the SiC substrate to form a metal-SiC material thereat and avoiding annealing at another location on the SiC substrate to avoid forming the metal-SiC material thereat, the annealing being carried out with laser light having photon energies above a bandgap of the SiC substrate.
Bibliography:Application Number: EP20040780967