Method for producing a photoelectric converter comprising a transparent conductive substrate

• Main Authors: SUEYOSHI, YUKIO, FUJISAWA, AKIRA, SETO, YASUNORI
• Format: Patent
• Language: English; French; German
• Published: 17.08.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CABLES; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS; CHEMISTRY; CONDUCTORS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GLASS; INSULATORS; JOINING GLASS TO GLASS OR OTHER MATERIALS; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; METALLURGY; MINERAL OR SLAG WOOL; PERFORMING OPERATIONS; PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS; SURFACE TREATMENT OF GLASS; TRANSPORTING

The present invention provides a transparent conductive substrate having optical transparency and conductivity that have been improved in a well-balanced manner. The transparent conductive substrate of the present invention includes a transparent base and a conductive metal oxide film formed on the base. This metal oxide film contains tin and fluorine. In a profile of the metal oxide film determined in the depth direction by SIMS, the value obtained by subtracting the minimum Imin of the ratio of sensitivity of the fluorine to that of the tin from the maximum Imax thereof is at least 0.15. The maximum Imax is higher than 1 while the minimum Imin is lower than 1. Furthermore, the position where the maximum Imax is obtained is closer to the surface of the metal oxide film as compared to the position where the minimum Imin is obtained.