METHOD FOR PRODUCING GROUP III NITRIDE SINGLE CRYSTAL AND APPARATUS USED THEREFOR

A production method is provided in which Group-III-element nitride single crystals that have a lower dislocation density and a uniform thickness and are transparent, high quality, large, and bulk crystals can be produced with a high yield. The method for producing Group-III-element nitride single cr...

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Main Authors YOSHIMURA, MASASHI, KAWAMURA, FUMIO, MORI, YUSUKE, SASAKI, TAKATOMO, UMEDA, HIDEKAZU
Format Patent
LanguageEnglish
French
German
Published 15.03.2006
Edition7
Subjects
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Summary:A production method is provided in which Group-III-element nitride single crystals that have a lower dislocation density and a uniform thickness and are transparent, high quality, large, and bulk crystals can be produced with a high yield. The method for producing Group-III-element nitride single crystals includes: heating a reaction vessel containing at least one metal element selected from the group consisting of an alkali metal and an alkaline-earth metal and at least one Group III element selected from the group consisting of gallium (Ga), aluminum (Al), and indium (In) to prepare a flux of the metal element; and
Bibliography:Application Number: EP20040720698