ION BEAM INCIDENT ANGLE DETECTOR FOR ION IMPLANT SYSTEMS

The present invention facilitates semiconductor device fabrication by monitoring and correcting angular errors during ion implantation procedures via an incident ion beam angle detector. Additionally, the present invention facilitates semiconductor device fabrication by calibrating a process disk wi...

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Bibliographic Details
Main Authors PARRILL, THOMAS, GRAF, MICHAEL, FREER, BRIAN, REESE, RONALD
Format Patent
LanguageEnglish
French
German
Published 17.09.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GAMMA RAY OR X-RAY MICROSCOPES
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
IRRADIATION DEVICES
MEASURING
NUCLEAR ENGINEERING
NUCLEAR PHYSICS
PHYSICS
SEMICONDUCTOR DEVICES
TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
TESTING
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Summary:The present invention facilitates semiconductor device fabrication by monitoring and correcting angular errors during ion implantation procedures via an incident ion beam angle detector. Additionally, the present invention facilitates semiconductor device fabrication by calibrating a process disk with respect to an incident ion beam without measuring implantation results on wafers prior to an ion implantation process.
Bibliography:Application Number: EP20040758758