MULTI-WAVELENGTH SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURING METHOD

• Main Authors: KIMURA, YOSHINORI, WATANABE, ATSUSHI, MIYACHI, MAMORU
• Format: Patent
• Language: English; French; German
• Published: 10.10.2007
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

A multi-wavelength semiconductor laser device having a high reflectance multi-layered film that can be collectively formed on a facet of a semiconductor laser element is provided. The multi-wavelength semiconductor laser device is made of a plurality of semiconductor laser elements each of which oscillates at a wavelength different from each other. The plurality of semiconductor laser elements each have a reflective film that is deposited on at least one of a front facet and a backside facet thereof and has the same multilayer structure. The reflective film has, disposed in a film thickness direction, a first reflective region that has a first predetermined reflectance to a first wavelength that is oscillated from a first semiconductor laser element of the semiconductor laser elements; and a second reflective region that has a second predetermined reflectance to a second wavelength that is oscillated from, other than the first semiconductor laser element, a second semiconductor laser element and is different from the first wavelength.