GaAsSb/InP heterojunction bipolar transistor and method of fabricating the same

A heterojunction bipolar transistor (HBT) (100) comprises a collector (106) formed over a substrate (102), a base (108) formed over the collector (106), an emitter (112) formed over the base (108), and a tunneling suppression layer (110) between the collector (106) and the base (108), the tunneling...

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Bibliographic Details
Main Authors BAHL, SANDEEP R, MOLL, NICOLAS J
Format Patent
LanguageEnglish
French
German
Published 05.10.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A heterojunction bipolar transistor (HBT) (100) comprises a collector (106) formed over a substrate (102), a base (108) formed over the collector (106), an emitter (112) formed over the base (108), and a tunneling suppression layer (110) between the collector (106) and the base (108), the tunneling suppression layer (110) fabricated from a material that is different from a material of the base (108) and that has an electron affinity equal to or greater than an electron affinity of the material of the base (108).
Bibliography:Application Number: EP20040027443