Method of forming an interconnection line structure

• Main Authors: LEE, SEUNG-JIN, SHIN, HONG-JAE, KIM, JAE-HAK, LEE, KYOUNG-WOO, WEE, YOUNG-JIN, PARK, KI-KWAN
• Format: Patent
• Language: English; French; German
• Published: 24.04.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for forming an interconnection line and an interconnection line structure are disclosed. The method includes forming an interlayer insulating layer (104) on a semiconductor substrate (100), wherein the interlayer insulating layer is formed of a carbon-doped low-k dielectric layer. An oxidat...